14:44 GMT, August 31, 2009 TEWKSBURY, Mass. | Raytheon Company's (NYSE: RTN) innovative gallium nitride (GaN) chips have achieved 1,000 hours of reliable operation, positioning this technology as the standard for next generation radar capability.

GaN technology provides increased reliability and efficiency, resulting in lower prime power consumption and relaxed cooling requirements. Thus, GaN T/R modules provide significantly higher long-pulse radio frequency (RF) power than that of standard gallium arsenide (GaAs) T/R modules.

Most notably, Raytheon engineers have now successfully demonstrated the reliable operation of a GaN power amplifier microwave monolithic integrated circuit (MMIC) operating for more than 1,000 hours with no measurable performance degradation.

"This milestone enables us to insert GaN next generation capability into a multitude of air and missile defense programs," said Pete Franklin, vice president for Raytheon Integrated Defense Systems' National & Theater Security Programs. "GaN will also give the warfighter significantly more mobility, capability and reliability on the battlefield. Its ability to run more efficiently than other technologies will help solve many of our customers' logistical concerns."